February 25th, 2010
The BU406 transistor is a Silicon Epitaxial-Base Planar NPN transistor. These devices are used for horizontal deflection
output stages of large screens MTV receivers with 110 C CRT.
In the datasheet you will find absolute maximum rating for Collector Base Voltage (Vcbo): 400V, Emitter Base Voltage (Vebo): 6V, Collector Current (Ic): 7A, Base Current (Ib): 4A. Electrical Charactheristics : 70-240 for the DC Current Gain, 1.2V Base Emitter Saturation Voltage, 1V Collector Emitter Saturation Voltage, 0.75us Turn-off Time and 10 MHz Transition Frequency.
BU406 Silicon Epitaxial-Base Planar NPN Transistor Datasheet continued »
Tags: BU406 datasheet, npn transistor datasheet, silicon epitaxial
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February 24th, 2010
4N26 devices is an emitting diode optically coupled to a monolithic silicon phototransistor detector, it may be applied
in applications such general purpose switching circuits, I/O interfacing, and solid state relays. The following picture shown the 4N26 Emitting Diode Pinout Diagram.
And here is 4N26 PINOUT Description:
1 – LED Anode
2 – LED Cathode
3 – N.C
4 – Emitter
5 – Collector
6 – Base
Tags: 4N26 datasheet, Pinout Diagram
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February 24th, 2010
The mini2440’s power system utilizes a voltage step-down chip to generate three kinds of voltages: 3.3V, 1.8V and 1.25V which connected to an external 5V power supply. The following picture shows 1.25V Mini2440 Power Supply System Schematic Diagram.
This Mini2440 power supply system doesn’t have a full featured power management circuit, also it is not under software control.
1.25V Mini2440 Power Supply System Schematic Diagram continued »
Tags: Mini2440 schematic, power supply circuit
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